Volume 06,Issue 03

Diffusion Currents in Hole Devices Organic Polymers Semiconductors

Authors

Muhammad Ammar Khan, Bilal Ahmad, Amr S. Zalhaf

Abstract
The transport model of improved J-V formula based on the work by Ammar and Sun[1] is now applied to hole only devices (MEH-PPV), and (PF-TAA) of different thickness with various temperatures. The obtained results are strongly agree with complete numerical solution and experimental data. From this study it is verified that this formula base charge transport model is accurate, precise, and covers a large number of materials. These theoretical result are opening an interesting prospects in near future.

Keyword: Organic diode, Mobility, Charge transport, Electronic devices, New density of state (DOS).

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